The Endura® is a single-wafer, multi-chamber system used for deposition of thin metal films on wafers ranging in size from 5", 6", or 8". The multi-chamber design allows for individual processes in each of the chambers.
The Endura® platform incorporates dual loadlocks, a staged vacuum system (buffer and transfer chambers), and ultra-high vacuum for PVD processes.
The multi-chamber design allows for individual processes in each of the process chambers. The platform supports both Physical Vapor Deposition (PVD) and Chemical Vapor Deposition (CVD) processes.
The following chamber types can be added to the system:
Aluminum PVD- Processes include: Aluminum A Type, Aluminum Durasource, Aluminum Planarized, Aluminum Coherent A Type.
Titanium PVD - Processes include: Titanium A Type, Titanium B Type, Titanium Durasource, Titanium Coherent A Type, Titanium Coherent Durasource.
TiNitride PVD - Processes Include: TiNitride Durasource, Ti/TiNitride Durasource, Ti/TiNitride Coherent G3, Ti/TiNitride Coherent G4.
Refractory PVD - Processes include: TiW B Minus Type, TiW Durasource, WSi B Minus Type, WSi Durasource, W B Minus Type, W Durasource, Si B Minus Type, Si Durasource, Cobalt B Minus Type, Cobalt Durasource, MoSi B Minus Type, MoSi Durasource.
Copper - Processes include: Electra IMP Copper, SIP Copper
PVD DeGas - Degasses the wafer by heating off any moisture on the wafer surface.
CVD TiN - Processes include: CVD TxZ, CVD HP TxZ, CVD HP+ TxZ.
CVD TiSiN - Processes include: CVD TxZ, CVD HP TxZ, CVD HP+ TxZ, TiSiN.
MAC - Metal Anneal Chamber. Used for post metal deposition annealing.
Holding - Provides a place to store one wafer.
Preheat - Used to preheat a wafer before entering a process chamber.
Cooldown - Used to cool a wafer after leaving a process chamber.
Preclean - Removed oxide from the wafer surface prior to metal deposition.
Orienter/Degas - Findes center of the wafer for proper placement. Notch/flat aligns the wafer. If degas option is present, then a degas lamp module and lamp driver are installed.
